Pre-silicon parameter generation methodology using BSIM3 for circuit performance-oriented device optimization

We present a physical parameter extraction methodology for BSIM3v3 to generate accurate pre-silicon parameters (parameters created before device fabrication). Using this method, the parameters of the 0.20-/spl mu/m process device can be generated from a 0.25-/spl mu/m technology with 5% accuracy in a few minutes. We applied this method in optimizing the devices of our microprocessor in the early stages of design.