Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods

A double chamber vacuum system was constructed for the electron spectroscopy study of GaN layer growth. The samples are prepared by vacuum deposition from Knudsen-type Ga source in the afterglow atmosphere of active nitrogen produced by high-pressure RF-plasma source. The growth chamber is connected to the analysis chamber equipped with electron spectroscopy (XPS, AES) analysis, permitting to study the chemical composition of layers as a function of growing conditions. It is shown that the new RF-source is suitable for preparation of pure stoichiometric GaN layers.