Propriétés statiques et dynamiques du transistor MOS de puissance à tranchées (UMOS) “basse-tension”

In this paper~ a contribution to the study of the performances of the trench power MOSFET'S in the low voltage range (< 100 Vi devices is done. A model for the power UMOSFET is presented, based on physical phenomena and electrical properties of the structure. This model is further simplified and embedded in the software SPICE. The comparison of sim- ulated and experimental static and dynamic characteristics allows validation of our approach. We then compare UMOS and VDMOS performance in the same breakdown voltage range: we confirm that the static performances of the UMOS are better than those of the VDMOS. From a dynamic point of view (resistive switching in our case), UMOS offers a smaller chip area than VDMOS for the same losses.