Doping Engineered InSe Flakes for High Mobility Phototransistor
2020
Sn doped InSe crystal has a reduced oxide phase and enhanced electron mobility. Along with the substrate modification, the mobility enhances to 2560±240 cm2 V-1s-1. Moreover, it exhibits a piezo-phototronic effect useful for practical implementation
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
6
References
0
Citations
NaN
KQI