Analysis and characterization of microstrip structures up to 90 GHz in SiGe BiCMOS

In this work electromagnetic analysis and experimental verification of integrated microstrip transmission lines on silicon substrates have been performed up to 90 GHz. Several microstrip lines of different width and length have been realized on a five metal layer silicon substrate together with a commercial SiGe HBT process. All structures have been analyzed using a 2.5D electromagnetic simulation environment. The results of the EM simulation are compared with measurements. De-embedding techniques have been applied on the measured results to remove probe pad and other parasitic effects. Line parameters like characteristic impedance, propagation constant and effective permittivity are determined from de-embedded structures. The dependency of these quantities on various design parameters will be presented.