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Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology
Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology
2008
Y.K. Chin
Kin Leong Pey
N. Singh
Guo-Qiang Lo
Lap Chan
L. H. Tan
Eu Jin Tan
Keywords:
Nanotechnology
Schottky barrier
MOSFET
Intrusion
Nanowire
Optoelectronics
Nickel silicide
Materials science
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