Old Web
English
Sign In
Acemap
>
Paper
>
Recovery of Bias-Stress Ionized Igzo/SiO2 Interface States Via Cryogenic Relaxation
Recovery of Bias-Stress Ionized Igzo/SiO2 Interface States Via Cryogenic Relaxation
2017
Tarun Mudgal
Anish Bharadwaj
Prashant Ganesh
Eli Powell
Robert G. Manley
Karl D. Hirschman
Keywords:
Ionization
Electronic engineering
Materials science
Engineering physics
Electrical engineering
bias stress
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]