CAD-compatible high-speed CMOS/SIMOX technology using field-shield isolation for 1 M gate array

A specific 0.5 /spl mu/m CMOS/SIMOX technology was developed for a 1 M gate array/SOG (Sea Of Gates) using field-shield (FS) isolation to overcome a pending problem of source-to-drain breakdown voltage (BV ds) lowering. The ring oscillator fabricated on the FS isolated SOG gate array exhibited 1.7 times higher speed operation than that on a bulk-Si counterpart keeping the lower power consumption feature even at a relatively high drain voltage of 3 V. >