DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Si₀.₈₈Ge₀.₁₂(C) Heterostructure Channel

Electrical properties of Si?.??Ge?.₁₂(C) p-MOSFETs have been exploited in an effort to investigate Si?.??Ge?.₁₂(C) channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in Si?.??Ge?.₁₂ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. Si?.??Ge?.₁₂(C) channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of Si?.??Ge?.₁₂(C) heterostructures.