Field‐effect phenomena in hydrogenated amorphous silicon photoreceptors

The imaging properties of hydrogenated amorphous silicon (a‐Si:H) photoreceptors overcoated with insulating passivation layers are discussed. Field‐effect phenomena are shown to interfere with the electrophotographic imaging process in this device configuration. Since photoreceptors are majority carrier devices and a‐Si:H is an extrinsic material, the field‐effect phenomena can be counteracted by proper doping of the a‐Si:H‐insulator interface.