The Spatial Distribution of Channeled Ions and Ranges of Hydrogen Isotopes in Crystalline Silicon and Tungsten

The ranges of H and D ions in crystalline Si and W have been calculated. It is shown that the depth distribution of the ranges is divided into two components with an increase in the ion energy: one is related to the atomic scattering in surface layers, while the other characterizes particles captured into the channel. A new phenomenon has been observed: a stable spatial structure of the beam component captured into the channel is formed when particles propagate for a short distance. At ion deceleration, the particles pass to neighboring channels and the spatial structure of the beam of particles captured into the channel breaks near the stop point. A schematic of the experiment is proposed, which makes it possible to relate the obtained spatial distribution and the angular distributions of the escaped particles.