Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (EU) was changed inversely with optical band gap of the indium-doped ZnO thin films.