Deep-Level Spectroscopy by Analysis of Isothermal Capacitance Transients (*).

Deep-level spectrometry of semiconductor has been carried out by measuring isothermal capacitance transients. From the recorded transients, DLTS signals have been reconstructed by software to give Arrhenius plots. Transients have been acquired in two time ranges to increase the emissivity interval on which to observe the trap decay. The method has been tested on Mo/GaAs Schottky barriers and a comparison has been carried out with results obtained on the same diodes using a commercial DLTS system.