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Characterization of Nanoscale Lattice Strains in Si CMOS by Convergent Beam Electron Diffraction (CBED)
Characterization of Nanoscale Lattice Strains in Si CMOS by Convergent Beam Electron Diffraction (CBED)
2005
Jie Huang
D. K. Cha
P. R. Chidambaram
Richard B. Irwin
P.J. Jones
Moon J. Kim
Keywords:
CMOS
Beam electron
Lattice (order)
Diffraction
Electron backscatter diffraction
Nanoscopic scale
Optics
Reflection high-energy electron diffraction
Materials science
convergent beam
Electron diffraction
Correction
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