Power semiconductor module with a detector for detecting a current flowing through a power semiconductor device circuit the main current

Power semiconductor module (2; 2a) with a detector (12; 12b; 12c; 12e) for detecting a current flowing through a power semiconductor device circuit the main current, wherein the detector comprises: - a first and a second switching conductor pattern (14, 15; 14b, 15b; 14c, 15c; 14e, 15e); - a bonding wire (16; 16C, 16D) which is connected to a first and a second contacting point (C, D) to the first and second switching conductor pattern; and - a pair of contact-conductor structures (18, 19; 18b, 19b; 18c, 19c; 18e, 19e) which are led around from the first and second contacting point of the first and second switching conductor pattern, wherein the detector is adapted to detect a potential difference between the pair of contact-conductor structures caused by the fact that a main circuit current through the first switching conductor pattern, the bonding and then through the second switching conductor pattern flows to a potential difference in the bonding wire capture.