Structural and electrical properties of (Bi0.88Sb0.12)0.86In0.14 crystal

Abstract The III-V groups of materials with narrow energy gap possessing favourable attributes have attracted the attention of researchers, as a special class of optoelectronic compounds. (Bi0.88Sb0.12)0.86In0.14 crystal has been grown using vertical Bridgman Technique by maintaining axial temperature gradient 60°C/cm with lowering growth rate 0.7 cm/h. The crystallinity of the material depends on the shape of the ampoule and diameters on the crystal and homogeneity was studied. Study of structural characterization using X-Ray Analysis, optical study characterized by UV–VIS spectroscopy and Electrical properties studied using Hall Measurement as well as I-V measurement. The results are reported and discuss in detail.