An enhanced physical and scalable lumped model of RF CMOS spiral inductors

An enhanced scalable compact model for on-chip RF spiral inductors is presented in this paper. By considering the layout and technology parameters under quasi-static approximation, the model elements are all expressed analytically and based on physics assumption. The proposed approach improves the accuracy of the previous physical based scalable model, and considers the frequency dependant behavior of spiral inductors such as the substrate coupling, the skin and proximity effect.