A Novel X‐ray Diffraction and Reflectivity Tool for Front‐End of Line Metrology

High‐resolution X‐ray diffraction (HRXRD) is an established technique for the characterization and metrology of epitaxial thin‐films. However, its use by the silicon semiconductor industry has been limited due to the stringent reliability, spot‐size and throughput requirements for in‐line measurement of product wafers. We have developed a new X‐ray metrology tool (called the JVX 7200) that meets these demands. The tool features a novel HRXRD channel that provides composition, relaxation and thickness information for SiGe and Si:C epitaxial films. It also combines an enhanced X‐ray reflectivity (XRR) channel to provide complementary thickness, density and roughness information on SiGe as well as other front‐end of line (FEOL) films, such as those found in high‐k gate/metal gate (HKMG) stacks. We describe the principles and capabilities of both the HRXRD and XRR channels and provide a comparison with conventional X‐ray systems. Representative data are presented to highlight the capabilities of the new tool.