Stable, self‐aligned TiNxOy/TiSi2 contact formation for submicron device applications

The formation of the TiNxOy/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 has been studied. The chemical stability in dilute HF and the effectiveness of TiNxOy on TiSi2 as a diffusion barrier for Al are discussed. The results show that this bilayer has good chemical stability in dilute HF at least for 60 s and Al/TiNxOy/TiSi2/Si is thermally stable up to 500 °C for 30 min sintering.