Ion channeling study of damage in neutron irradiated GaAs

Abstract The lattice disorder in GaAs produced by fast neutrons with a fluence of 7 × 10 17 n cm −2 has been investigated with 1.5-MeV 4 He + channeling and electron spin resonance (ESR) measurements. The slight change in the 〈100〉-aligned yield for irradiated crystals indicates that each primary knock-on (PKO) produces approximately 10 3 displaced atoms. Detailed angular scans suggest a spread distribution of randomly-located defects imbedded in the lattice structure. On the other hand, As Ga 4 antisite defects per PKO estimated from ESR measurements are ~ 100. It is suggested that neighboring atoms of As Ga 4+ antisite defects are slightly distorted after the PKO event.