Process Optimization for HCI Improvement in I/O Analog Devices.

Hot carrier injection is one of the more significant reliability issue in advanced CMOS technologies. If it is more and more critical in thin oxides due to gate length scaling, it is also problematic in thicker oxide due to high voltages needed for I/O devices. In this paper, we show a phenomenal HCI improvement in I/O CMOS analog devices by substituting arsenic with phosphorus in channel doping for threshold voltage adjustment process.