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Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography
Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography
2019
Kiyotaka Nakano
Miko Matsumoto
Satoshi Anada
Kazuo Yamamoto
Yukari Ishikawa
Tsukasa Hirayama
Yuto Ando
Masaya Ogura
Atsushi Tanaka
Yoshio Honda
Hiroshi Amano
Keywords:
Optoelectronics
Semiconductor
Electron holography
Dopant
Materials science
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