Reflection high-energy electron diffraction intensity oscillations during growth of (Al,Ga)As on GaAs(111)A

Abstract We have made a reflection high-energy diffraction (RHEED) intensity oscillation study of the growth of (Al,Ga)As on GaAs and (Al,Ga)As (111)A surfaces. The RHEED intensity oscillations during growth of (Al,Ga)As are dependent on both growth temperature and As 4 :Ga flux ratio. In addition, the oscillation period decreases as the Al fraction in the (Al,Ga)As is increased. Changes in the oscillation period during growth of the first few monolayers of both GaAs on (Al,Ga)As and (Al,Ga)As on GaAs may indicate the intermixing of Al and Ga near the heterointerface.