XAFS Study of SiX (X=C or N) with Poor Crystallinity

X-ray absorption spectra of several silicon compounds with high S/N ratios were obtained over a wide energy span, up to 950 eV above the silicon K-edge monitoring total electron yields from the sample. EXAFS analysis of a CVD thin film of Si3N4 elucidated the presence of contaminated Si metal in the α-Si3N4 structure. EXAFS and XANES analyses detected SiC crystallites in a CVD thin film of SiC, which could not detected by X-ray diffraction.