Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy

Trapping effects still limit the application of GaN-based high-electron mobility transistors (HEMTs). This paper further characters traps in GaN HEMTs based on the drain current transients. A hybrid transient, which contains more valuable information of traps than the single trapping or detrapping transient was detected and analyzed. Three traps with different time constants were determined and their possible mechanisms were discussed. In particular, a dynamic capturing and releasing process during the current transient was proposed, by which a more appropriate measured condition for analyzing current transients can be acquired.