Electronic structure of NdMn2Ge2 and GdMn2Ge2

Abstract Resonant photoemission spectra of RMn 2 Ge 2 (R = Nd, Gd) have been measured in the R 4d–4f and Mn 3p–3d absorption region. The Nd 4f partial density of states (DOS) in NdMn 2 Ge 2 exhibits a peak at 5.5 eV with a tail toward the shallower binding-energy side and the finite intensity at the Fermi level ( E F ) due to the hybridization with the conduction bands. On the other hand, the Gd 4f partial DOS shows a core-like peak at 8.5 eV with no contribution to E F . The experimental results indicate that the hybridization between the R 4f and conduction bands is stronger for NdMn 2 Ge 2 than for GdMn 2 Ge 2 . The Mn 3d partial DOSs contribute to E F for both compounds and their feature is affected by R elements.