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Simulation Study on a GaN-npn HBT with a AlGaInN Emitter Layer and a Quantum Well Base layer
Simulation Study on a GaN-npn HBT with a AlGaInN Emitter Layer and a Quantum Well Base layer
2021
Yutaka Nikai
Yusuke Iida
Akira Mase
Takashi Egawa
Makoto Miyoshi
Keywords:
layer
Materials science
Optoelectronics
Base (exponentiation)
Heterojunction bipolar transistor
Quantum well
Common emitter
Correction
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