Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
2021
To improve the properties of semiconductors, it is necessary to construct an integrated crystal growth model that covers all elementary processes of metal–organic vapor phase epitaxy (MOVPE). Altho...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
63
References
2
Citations
NaN
KQI