Monolithic Integration of ln0.53Ga0.47As Photodiodes and Ino,,Gao~4,As/lno~,,AIo,,As HEMTs on GaAs Substrates for Long Wave length OE I C Ap p I i cat io n s

Metamorphic long wavelength double heterojunction photodiodes with Ino,,-~Ga~,~~As photo-absorption layer and Ino.5~Gao.47As/I nos~Al~.~~s metamorphic HEMTs were realized on the same GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics and the performance of HEMTs beneath the photodiode layers were also comparable to those fabricated on HEMT-%nly heterostructures.