Power device junction terminal structure and manufacturing method thereof

The invention relates to a power device junction terminal structure and a manufacturing method thereof. The power device junction terminal structure includes: field limiting rings, which are arranged at the outer side of an outermost main junction at intervals; and charge compensation zones, which are formed at an epitaxial layer at intervals by a doping way and penetrate a metallurgical junction plane, approaching the outer side, of the outermost main junction and metallurgical junction planes, approaching the outer side, of the field limiting rings. The conduction types of the charge compensation zones are identical with those of the field limiting rings. The provided power device junction terminal structure has advantages of good voltage endurance capability and high reliability.