Plasma oxidation induced ultra-low power performance from a-SiN x :H resistive switching memory

a-Si 0.28 N 0.21 O 0.51 :H resistive switching memory (RRAM) with ultra-low power is obtained by plasma oxidation of a-Si 0.48 N 0.52 :H films in PECVD. It is found that the current of Al/a-Si 0.28 N 0.21 O 0.51 :H/Si device in the high and low resistance states is obviously lower than that of the Al/a-Si 0.48 N 0.52 :H/Si. Especially the current of the low resistance state reaches 10 −8 A when the read voltage is 0.5 V. Based on the analysis of XPS, we have investigated the origin of the ultra-low power resistive switching performance of Al/a-Si 0.28 N 0.21 O 0.51 :H/Si device in detail.