Electronic Raman scattering as a probe for investigating interactions between impurities in silicon

Electronic Raman scattering (ERS) is investigated as a probe for interactions between impurities in silicon. We report ERS measurements of donors (P, Sb, and As) and acceptors (B) at various concentrations and measurements at various illumination wavelengths. The difference between above and below indirect band gap measurement is discussed in terms of the difficulties of using ERS as a localised probe. We extend the previous literature on impurity interactions of Si:P in the bulk to include Sb and B and demonstrate that the perturbation of the observed ERS transition energy resulting from wavefunction overlap of nearest neighbours is opposite for donors and acceptors. Finally, we model the magnitude of the shift to the first order as a function of the mean impurity atom separation.