Thin film manufacturing method

An object of the present invention is to provide a thin film manufacturing method. A Thin film manufacturing method provided by the present invention includes the following steps: providing an original substrate; an etch stop film layer formed on the original substrate; a sacrificial layer is formed on the etch stop film layer; implanting gas ions and, to form an ion concentration distribution peak layer, defining an effective transition thin film layer and the residual layer; separating the effective transition thin film layer and the residual layer. By controlling the Atsudo sacrificial layer, it is possible to control the Atsudo effective transition thin layer efficiently. Further, a uniform effective transition thin layer Atsudo, achieving Atsudo the order of nanometers. .FIELD 1