Microstructural and magnetic study of Fe-implanted 6H-SiC

Abstract Single crystalline 6H-SiC near (0 0 0 1)-oriented p-type samples were co-implanted at 550 °C with Fe ions at different energies and fluences ranging from 30 to 160 keV and from 2×10 15 to 8×10 15  ions cm −2 with the aim to get so-called diluted magnetic semiconductors (DMS). Different treatments for implantation-induced damage recovery and iron incorporation and activation in the SiC matrix have been studied: the effects of rapid thermal annealing (RTA) on microstructure and magnetic properties of Fe-implanted 6H-SiC are compared to those of laser processing in the solid phase.