Relations between Surface Morphology and Dislocations of SiC Crystal

We observed fine surface morphology of silicon carbide wafers using a low energy scanning electron microscope (LESEM). Typical kinds of surface defects were observed by LESEM. After low temperature KOH treatment, it is confirmed that positions of etch pits are the same positions of these defects. Correlation between LESEM imaging and cross-sectional scanning transmission electron microscopy (STEM) of the same defects reveals threading dislocations and basal plane dislocations at the core of the defects.