Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch

In this paper, a parallel arrangement of a silicon MOS-gated thyristor structure and a silicon carbide Power MOSFET is proposed and experimentally demonstrated for the first time. Experimental results show that the hybrid switch exhibits low conduction losses at low current levels as well as large current-carrying capability at high current levels. In addition, compared to Clustered IGBT structure, the hybrid switch exhibits a 43% reduction in E off without any increase in V ce(sat) at 150°C.