Film properties and integration of a variety of FSG films

FSG films were deposited using a wide variety of manufacturing processes employing PECVD, HDP-CVD with both SiH/sub 4/-based and TEOS-based chemistries. Physical and chemical properties were compared for blanket films, and parametric and defect analysis was performed on integrated circuit test structures. Blanket wafer results indicate that the TEOS-based films had the best stability.