A novel n-channel MOSFET featuring an integrated Schottky and no internal p-n junction

This paper presents a new MOSFET structure with an integrated Schottky junction in every unit cell and with no p-n junction in the current flow path. This eliminates the injected reverse recovery charge while providing a low forward voltage drop anti-parallel Schottky diode. Gate controlled current conduction in the on-state takes place through an accumulated channel region formed along the trench sidewall. A specific on-resistance of 10.6 m/spl Omega/-mm/sup 2/ and 7.6 m/spl Omega/-mm/sup 2/ for a gate bias of 4.5 V and 10V respectively has been achieved, with a forward blocking voltage of over 30 V. This coupled with no reverse recovery charge makes the device very suitable for high frequency DC-DC converter applications.