Mirror facet temperature study of cw high-power (P = 5.3 W, λ = 0.8 µm) InGaAsP/GaAs SCH single quantum-well laser diodes

Results published recently1,2 demonstrate that high-power λ = 0,808 μm laser diodes can be prepared based on InGaAsP/GaAs SCH single quantum-well (SQW) structures grown by a modified version of liquid phase epitaxy.