Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode

The effect of electron incidence into xenon gas molecules has been investigated by using a nanocrystalline silicon (nc-Si) planar ballistic emitter. Vacuum-ultraviolet light emission is observed without discharging when the nc-Si device is driven in xenon gas. The emission spectrum of xenon at 10kPa shows peaks at 152 and 172nm which originate from Xe2* radiation. These results strongly suggest that energetic electrons directly excite xenon molecules followed by radiative relaxations. The observed effect is potentially applicable to mercury-free, efficient, and stable flat panel light sources.