The Field Effect in a Metal–Ferroelectric–Semiconductor System of Multilayer Ferroelectric Films with Various Structure Types

The ability to grow the interfacial defect-poor Sr0.5Ba0.5Nb2O6 + Ba0.2Sr0.8TiO3 and Ba0.8Sr0.2TiO3 + Ba0.4Sr0.6TiO3 ferroelectric films onto the doped silicon substrates is discussed. A study of piezo-response via the quasi-static method (using the electrode area of 0.07 mm2) reveals that heterostructures possess an initial polarized ferroelectric state with a spontaneous polarization vector perpendicular to the substrate at any type of Si conductivity. The polarized state is established to refer to two-dimension stresses in the ferroelectric, which is tunable through a preprepared BaxSr1 – xTiO3 onto a sublayer substrate as well as to a thickness of this sublayer. Polarization switching in Sr0.5Ba0.5Nb2O6/Si and Ba0.8Sr0.2TiO3/Si heterostructures under the external field arises at only using the barium–strontium titanate sublayer predeposited onto silicon. A 15% decrease in switching polarization in Ba0.8Sr0.2TiO3/Ba0.4Sr0.6TiO3/Si structures is observed after 500 h.