Development of Structural Characterization and Properties of AlN Film Prepared by Pulsed Laser Deposition

Pulsed laser deposition(PLD) has become an optimized technique to fabricate the wide bandgap AlN semiconductor film due to its low deposition temperature. Optimal film/substrate matching and processing parameters are needed to obtain high-quality AlN films. In this paper, the orientation relationship between several hetero substrates and AlN films is reviewed. The effect of processing parameters on the film quality is analyzed. The electronic, optical, thermal properties of AlN films are introduced. The direction of further research is also briefly discussed.