Selective growth of InAlAs by low pressure metalorganic vapor phase epitaxy

Abstract InAlAs selective growth on a masked planar InP substrate with patterned SiO 2 has been studied with low-pressure metalorganic vapor phase epitaxy. No polycrystals were observed on the 10 × 200 μ m square mask stripes at a growth temperature of 650°C and a growth rate of 0.6 μm/h. A bandgap energy shift and growth-rate enhancement were confirmed in growth regions between the pair of SiO 2 masks. In a double hetero-structure consisting of selectively grown In 0.52 Al 0.48 As In 0.53 Ga 0.47 As multi-quantum well (MQW) active layers and In 0.52 Al 0.48 As cladding layers, a bright photoluminescence (PL) spectrum from the selectively grown MQW layer was obtained for the first time.