Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film

Abstract We have investigated the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with Er metal gate on SiO 2 film. Rapid thermal annealing (RTA) process leads to the formation of a high- k Er-silicate gate dielectric. The in situ high-voltage electron microscopy (HVEM) results show that thermally driven Er diffusion is responsible for the decrease in equivalent oxide thickness (EOT) with an increase in annealing temperature. The effective work function ( Φ m,eff ) of Er metal gate, extracted from the relations of EOT versus flat-band voltage ( V FB ), is calculated to be ∼2.86 eV.