A process for producing a semiconductor layer sequence

There is provided a method for producing a semiconductor layer sequence, comprising the steps of: - providing a growth substrate (50) having a growth surface (51) at a Aufwachsseite (50a) - growing a first nitride semiconductor layer (10) on the Aufwachsseite, - growing a second nitride semiconductor layer (20) on the first nitride semiconductor layer (10), wherein the second nitride semiconductor layer (20) has at least one opening (21) or at least one opening (21) in the second nitride semiconductor layer (20) is generated or during the growth of at least one opening (21) in the second nitride semiconductor layer (20) is formed, - removing at least a portion of the first nitride semiconductor layer (10) through the openings (21) in the second nitride semiconductor layer (20), - growing a third nitride semiconductor layer (30) on the second nitride semiconductor layer (20), wherein the third nitride semiconductor layer (30) at least locally covers the openings (21), such that between the growth substrate (50) and the subsequent semiconductor layers (10 , 20, 30) cavities are present, which are free of a semiconductor material, - separation of the growth substrate (50).