Study of the behaviour of a DI diode under the influence of a surface magnetic field

Double injection diodes consisting of an electron injecting cathode (n+) and a hole injecting anode (p+) exhibit s-type negative differential resistance under proper conditions similar to a silicon controlled rectifier. These devices usually have high threshold voltages and high holding voltages. This work explores the modulation of threshold voltage, in particular, with a surface magnetic field. For these devices, the threshold voltage variation under the influence of magnetic field is investigated for different anode to cathode separations.