Resonant power supply noise reduction using on-die decoupling capacitors embedded in organic interposer

This paper demonstrates an on-die STO thin film decoupling capacitor used for resonant power supply noise reduction. The on-die STO capacitor consists of STO whose dielectric constant is about 20 and is sandwitched by Cu films in an organic interposer on which we can also draw connection wires by Cu deposition. The capacitor was attached directly on our test chip using ball banding technique through PADs connection. Our experimental results using a real silicon chip shows that our on-die STO capacitor achieved significant resonant supply noise reduction. This result also shows that we can reduce the power supply noise without chip area penalty, and also it enables us to modify the noise characteristics even after the chip fabrication process.