HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions

In(0.15)Ga(0.83)N/GaN bilayers irradiated with 2.3 MeV Ne and 5.3 MeV Kr ions at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro-Raman scattering. The Ne ion fluences were in the range from 1 x 10(12) to 1 x 10(15) cm(-2), and the Kr ion fluences were in the range from 1 x 10(11) to 1 x 10(13) cm(-2). Results show that the structures of both In(0.15)Ga(0.85)N and GaN layers remained almost unchanged for increasing fluences up to 1 x 10(13) and 1 x 10(12) cm(-2) for Ne and Kr ion irradiations, respectively. After irradiation to higher fluences, the GaN layer was divided into several damaged layers with different extents of lattice expansion, while the In(0.15)Ga(0.83)N layer exhibited homogenous lattice expansion. The layered structure of GaN and the different responses to irradiation of the GaN and In(0.15)Ga(0.85)N layers are discussed. (C) 2011 Elsevier B.V. All rights reserved.