The nitride semiconductor light emitting element

The present invention provides a light-emitting element can be formed on the nonpolar face of the optical confinement increase, and may decrease the nitride semiconductor light emitting element of the optical loss caused by dislocations. Core semiconductor region 15, first cladding region 17 and the second cladding region 19 is mounted on a non-polar principal surface 13a GaN of the supporting base 13. The semiconductor region 15 includes an active core layer 21 and the carrier blocking layer 23. A first cladding region 17 comprises n-type AlGaN cladding layer 25 and the n-type InAlGaN cladding layer 26. n-type InAlGaN cladding layer 26 is provided between the n-type AlGaN cladding layer 25 and the active layer 21. Misfit dislocations at the interface 27b is greater than the dislocation density of misfit dislocation density at the interface 27a. AlGaN cladding layer 25 with respect to the support base 13 GaN lattice-relaxed, InAlGaN cladding layer 26 with respect to the AlGaN cladding layer 25 is lattice-relaxed.