Based on AlGaN / GaN MISHEMT device and a method for manufacturing ultra-high-voltage junction

The present invention discloses a method based on super junction AlGaN / device and method for fabricating high-voltage, high-voltage device structure GaNMISHEMT substrate includes, in order from bottom to top, GaN buffer layer, an intrinsic GaN (or AlGaN) channel layer, AlN spacer layer and the AlGaN barrier layer, a source, a gate, a drain, a linear AlGaN layer, the gate-source field plate, P-type GaN (or InGaN) layer, a base, and a gate of the AlGaN barrier layer on the AlGaN barrier layer It is also provided between the insulating dielectric layer. The benefits of the present invention is characterized in: increasing the concentration of 2DEG first, second and fourth regions when the device is turned on, resistance is reduced, achieve a lower on-resistance of the device; 2DEG first region when the device is turned off is reduced, the same as when the device is turned on a second 2DEG region and the third region, the device increases the width of the depletion region, achieve the purpose of improving the device breakdown voltage; a gate-source field plate ensures that the peak electric field does not occur in boundary near the gate source breakdown voltage is improved; insulated gate structure to avoid gate leakage current, improved device performance.